? 2002 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c24a i c90 t c = 90 c12a i cm t c = 25 c, 1 ms 48 a ssoa v ge = 15 v, t vj = 125 c, r g = 33 ? i cm = 24 a (rbsoa) clamped inductive load, l = 300 h @ 0.8 v ces p c t c = 25 c 100 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque with screw m3 0.45/4 nm/lb.in. mounting torque with screw m3.5 0.55/5 nm/lb.in. weight 6g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s features ? very high frequency igbt ? new generation hdmos tm process ? international standard package jedec to-247 ? high peak current handling capability applications ? pfc circuit ? ac motor speed control ? dc servo and robot drives ? switch-mode and resonant-mode power supplies ? high power audio amplifiers advantages ? fast switching speed ? high power density 98503b (2/02) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 250 a, v ge = v ge 2.5 5.0 v i ces v ce = 0.8 v ces t j = 25 c 200 a v ge = 0 v t j = 125 c 1.5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i ce90 , v ge = 15 v 2.1 2.7 v g = gate, c = collector, e = emitter, tab = collector to-247 c (tab) g c e hiperfast tm igbt lightspeed tm series v ces = 600 v i c25 = 24 a v ce(sat) = 2.7 v t fi(typ) = 55 ns ixgh 12n60c
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 5 11 s pulse test, t 300 s, duty cycle 2 % c ies 860 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 64 pf c res 15 pf q g 32 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 10 nc q gc 10 nc t d(on) 20 ns t ri 20 ns t d(off) 60 ns t fi 55 ns e off 0.09 mj t d(on) 20 ns t ri 20 ns e on 0.15 mj t d(off) 85 180 ns t fi 85 180 ns e off 0.27 0.60 mj r thjc 1.25 k/w r thck 0.25 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 300 h v ce = 0.8 v ces , r g = r off = 18 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 300 h v ce = 0.8 v ces , r g = r off = 18 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g ixgh 12n60c to-247 ad (ixgh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102
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